Single-chip
substrate for the manufacture of LED, also known as the substrate,
multi-use sapphire, SiC, GaAs, GaP for the material. In the single
crystal epitaxial films grown on single crystal multilayer films with
different thickness, such as AIGaAs, AIGaInP, GaInN and so on, used to
achieve different colors, or wavelengths of the LED. Common methods of
liquid phase epitaxy epitaxy (LPE), vapor epitaxy (VPE) and metal
organic chemical vapor deposition (MOCVD), etc., in which VPE and LPE
technology is already quite mature, and can be used to grow the general
brightness LED. The growth of high-brightness LED must be used MOCVD
method. |