video
On-Line: 1   Visitors: 10851558
10 Apr 2024 Wed
title_images
products search
Advanced Search
Keywords
 
categories

JINLING Chen

KIM Chen
 
Chi ming Electronics Co., Ltd. was established in Taiwan in 1984. Has nearly 38 years of experience. Manufacturing LED car lights, LED truck lights. Serving the needs of customers is the most important goal.

News & Events>>Research & Develop

Subject: Automotive Lighting Manufacturer-AUTO LED Lighting
2010-03-23



Direct light-emitting indium gallium nitride green (InGaN) diode laser operating in continuous wave output power and efficiency under the new world record As early as in the global set off a direct indium gallium nitride light-emitting green (InGaN) diode laser study of fever prior to Osram Opto Semiconductors researchers have made numerous key breakthroughs. In the United States at the 2010 San Francisco, Photonics West (Photonics West 2010) on, Stephan Lutgen a team led by Dr. the first to demonstrate directly the green light-emitting indium gallium nitride (InGaN) at 515 nm wavelength of up to 50 mW of continuous-wave output power The research and development data. Laboratory Data: Direct indium gallium nitride light-emitting green (InGaN) laser can emit 50 mW of continuous-wave output power, rewriting a world record. As a result, OSRAM Opto Semiconductors to erect a mobile laser projection area of a major new milestone. The optical power level for the screen, the beam energy of 10-15 lumens of RGB scanning beam laser projection is necessary. Commercially available control plane GaN substrates formed by the green laser emission laser diode as shown. In addition, the presentation of a comprehensive energy efficiency was 2.7%, indicating Youxiang successfully displays the direct laser light green indium gallium nitride (InGaN) diode laser a major step forward. To successfully achieve the true green laser emission of continuous wave operation, the need to remove several key barriers. First of all to be done, may be greater than or equal to 515 nm wavelength green emission caused by the required amount of high-indium light emission active layer (InXGa1-XN quantum potential well) and a low crystalline quality. Epitaxial growth process of Ga / In alloy fluctuations and point defects to minimize the achievement of a higher level of continuous wave output power is very important. OSRAM Opto Semiconductors, vice president of research and development, Dr. Volker Haerle, said: "These compact green laser light-emitting diodes directly will achieve high efficiency and output power, is bound to change completely the moment the green laser market."