LED light-emitting layer epitaxial
materials used in metal organic chemical vapor deposition (MOCVD)
technology, and quantum well (QW, Quantum Well) structure, so that to
improve its internal quantum efficiency. However, as semiconductor
materials with high optical refractive index (refractive index),
resulting in total reflection (TIR, Total Internal Reflection)
phenomenon, makes the grain produced by the beam can not escape out the
structure of the grain itself. Therefore, most of the light beam or
light-emitting electrode active layer was re-absorption, so generate a
large number of high-temperature heat phenomenon. The effect of a high
temperature will reduce the luminescence efficiency, resulting in
optical gain efficiency (extraction efficiency) is too low, so LED
packaging technology, mainly in how to improve the efficiency of light
to learn.
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