Organometallic vapor epitaxy method (Metal
Organic Vapor Epitaxy, MOCVD), for the production of high brightness
LED, its brightness at about 000 - 000mcd. In order to AIGaInp four
kinds of elements in gallium arsenide light-emitting layer material
substrate epitaxy were issued red, orange, yellow amber of the
University, commonly known as the quaternary LED; to GaN as the
material produced by blue, green LED, claimed that For the nitride LED,
generally Sapphire (Sapphire) as the substrate, the U.S. maker CREE
were developed with silicon carbide (SiC) as a substrate process.
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